- RS Stock No.:
- 124-8795
- Mfr. Part No.:
- FP35R12KT4B11BOSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 30/06/2025, delivery within 6 working days
Added
Price (VAT excluded) Each (In a Box of 10)
TWD3,071.70
(exc. GST)
TWD3,225.28
(inc. GST)
Units | Per unit | Per Box* |
10 - 10 | TWD3,071.70 | TWD30,717.00 |
20 - 30 | TWD2,979.50 | TWD29,795.00 |
40 + | TWD2,890.10 | TWD28,901.00 |
*price indicative |
- RS Stock No.:
- 124-8795
- Mfr. Part No.:
- FP35R12KT4B11BOSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 35 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 210 W |
Package Type | Econo2 |
Configuration | 3 Phase Bridge |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 23 |
Switching Speed | 1MHz |
Transistor Configuration | 3 Phase |
Dimensions | 107.5 x 45 x 17mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |