- RS Stock No.:
- 839-9951
- Mfr. Part No.:
- ATF-58143-BLKG
- Manufacturer:
- Broadcom
Discontinued product
- RS Stock No.:
- 839-9951
- Mfr. Part No.:
- ATF-58143-BLKG
- Manufacturer:
- Broadcom
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
N-channel HEMT, Avago Technologies
A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Specifications
Attribute | Value |
---|---|
Package Type | SOT-343 |
Mounting Type | Surface Mount |
Maximum Power Dissipation | 500 mW |
Pin Count | 4 |
Dimensions | 2.25 x 1.35 x 1mm |
Maximum Operating Temperature | +150 °C |