Infineon IR2127SPBF, Gate Driver 1, 500 mA 8-Pin 20V, SOIC
- RS Stock No.:
- 262-6701
- Mfr. Part No.:
- IR2127SPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 3800 units)*
TWD259,160.00
(exc. GST)
TWD272,118.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 3800 + | TWD68.20 | TWD259,160.00 |
*price indicative
- RS Stock No.:
- 262-6701
- Mfr. Part No.:
- IR2127SPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 500mA | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 65ns | |
| Driver Type | Gate Driver | |
| Rise Time | 80ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 500mA | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 65ns | ||
Driver Type Gate Driver | ||
Rise Time 80ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Current sensing single channel is a high voltage, high speed power MOSFET and IGBT driver. The protection circuity detects over current in the driven power transistor and terminates the gate drive voltage. The output driver features a high pulse current buffer stage designed for minimum cross conduction.
Floating channel designed for bootstrap operation
Under voltage lockout
Tolerant to negative transient voltage
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