Infineon 2ED2104S06FXUMA1 Gate Driver 2, 290 mA 8-Pin 25V, DSO
- RS Stock No.:
- 236-3635
- Mfr. Part No.:
- 2ED2104S06FXUMA1
- Manufacturer:
- Infineon
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TWD61,250.00
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TWD64,300.00
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Units | Per unit | Per Reel* | Saving |
|---|---|---|---|
| 2500 - 2500 | TWD24.50 | TWD61,250.00 | - |
| 5000 + | TWD23.50 | TWD58,750.00 | TWD5,000.00 |
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- RS Stock No.:
- 236-3635
- Mfr. Part No.:
- 2ED2104S06FXUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | DSO | |
| Number of Outputs | 2 | |
| Driver Type | General Purpose | |
| Rise Time | 170ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | 2ED2104S06F | |
| Length | 4.9mm | |
| Height | 1.72mm | |
| Width | 3.9mm | |
| Standards/Approvals | RoHS | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type General Purpose Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type DSO | ||
Number of Outputs 2 | ||
Driver Type General Purpose | ||
Rise Time 170ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series 2ED2104S06F | ||
Length 4.9mm | ||
Height 1.72mm | ||
Width 3.9mm | ||
Standards/Approvals RoHS | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It provides excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages. With no parasitic Thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
50% lower level-shift losses
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