Infineon MOSFET Gate Driver, 260 mA 8-Pin 625 V, SOIC
- RS Stock No.:
- 226-6200
- Mfr. Part No.:
- IRS21531DSTRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionSubtotal (1 reel of 2500 units)*
TWD55,750.00
(exc. GST)
TWD58,550.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 7,500 unit(s) shipping from June 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | TWD22.30 | TWD55,750.00 |
| 12500 + | TWD21.60 | TWD54,000.00 |
*price indicative
- RS Stock No.:
- 226-6200
- Mfr. Part No.:
- IRS21531DSTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 260mA | |
| Pin Count | 8 | |
| Fall Time | 80ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Rise Time | 220ns | |
| Minimum Supply Voltage | 15.4V | |
| Maximum Supply Voltage | 625V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IRS | |
| Length | 5mm | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 260mA | ||
Pin Count 8 | ||
Fall Time 80ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Rise Time 220ns | ||
Minimum Supply Voltage 15.4V | ||
Maximum Supply Voltage 625V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series IRS | ||
Length 5mm | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon IRS21531 is based on the popular IR2153 self-oscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. Noise immunity is achieved with low di/dt peak of the gate driver.
Integrated 600 V half-bridge gate driver
CT, RT programmable oscillator
15.4V Zener clamp on VCC
Micropower startup
Non-latched shutdown on CT pin
Internal bootstrap FET