Infineon MOSFET Gate Driver 1, 8 A 16-Pin 3.5V, DSO
- RS Stock No.:
- 222-4758
- Mfr. Part No.:
- 1EDF5673FXUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 222-4758
- Mfr. Part No.:
- 1EDF5673FXUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Output Current | 8A | |
| Pin Count | 16 | |
| Package Type | DSO | |
| Fall Time | 4.5ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 6.5ns | |
| Minimum Supply Voltage | 4V | |
| Maximum Supply Voltage | 3.5V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 1EDF5673F | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Height | 2.35mm | |
| Width | 7.5mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Output Current 8A | ||
Pin Count 16 | ||
Package Type DSO | ||
Fall Time 4.5ns | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 6.5ns | ||
Minimum Supply Voltage 4V | ||
Maximum Supply Voltage 3.5V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 1EDF5673F | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Height 2.35mm | ||
Width 7.5mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon single-channel galvanic ally isolated gate driver IC 1EDF5673F is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Low ohmic outputs
Single-channel galvanic isolation
Integrated galvanic isolation
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