STMicroelectronics VNB14NV04TR-E MOSFET Gate Driver 1, 20 A 2-Pin 40V, TO-263
- RS Stock No.:
- 190-6854
- Mfr. Part No.:
- VNB14NV04TR-E
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD421.00
(exc. GST)
TWD442.05
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 7,970 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | TWD84.20 | TWD421.00 |
| 250 - 495 | TWD82.20 | TWD411.00 |
| 500 + | TWD80.60 | TWD403.00 |
*price indicative
- RS Stock No.:
- 190-6854
- Mfr. Part No.:
- VNB14NV04TR-E
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | General Purpose Driver | |
| Output Current | 20A | |
| Pin Count | 2 | |
| Package Type | TO-263 | |
| Fall Time | 30μs | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Rise Time | 30μs | |
| Minimum Supply Voltage | 40V | |
| Maximum Supply Voltage | 40V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Width | 9.35mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type General Purpose Driver | ||
Output Current 20A | ||
Pin Count 2 | ||
Package Type TO-263 | ||
Fall Time 30μs | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Rise Time 30μs | ||
Minimum Supply Voltage 40V | ||
Maximum Supply Voltage 40V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Width 9.35mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
The STMicroelectronics VNB10N07 are monolithic device made using VI Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. It built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
ESD protection
Direct Access to the gate of the power MOSFET
Linear current limitation
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