STMicroelectronics MASTERGAN6TR, High Voltage 2, 16 A 35-Pin 21V, QFN

The STMicroelectronics Advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver. The integrated power GaNs have typical RDS(ON) of 140 mΩ and 650 V drain source blocking voltage. It features linear regulators on both the lower and upper driving sections to optimize driving efficiency. The high side of the embedded gate driver can be supplied by the integrated bootstrap diode. The interlocking function avoids cross-conduction conditions. The Advanced driver section, thanks to small propagation delay, very short wake-up time, and short, minimum on-times, enables high frequency switching operation. The extended range of input pins as well as the remote signalling pin (FLT) allow easy interfacing with controllers, microcontrollers, or DSP units. The standby pin allows to reduce the power consumption of the device during inactive periods.

Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gate driver