STMicroelectronics L6388ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17V, SO-8
- RS Stock No.:
- 152-017P
- Mfr. Part No.:
- L6388ED013TR
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
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TWD2,670.00
(exc. GST)
TWD2,803.50
(inc. GST)
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In Stock
- Plus 1,865 unit(s) shipping from September 07, 2026
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Units | Per unit |
|---|---|
| 50 - 95 | TWD53.40 |
| 100 - 495 | TWD52.40 |
| 500 - 995 | TWD51.20 |
| 1000 + | TWD50.40 |
*price indicative
- RS Stock No.:
- 152-017P
- Mfr. Part No.:
- L6388ED013TR
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Package Type | SO-8 | |
| Fall Time | 40ns | |
| Driver Type | High Side | |
| Number of Outputs | 2 | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 17V | |
| Minimum Operating Temperature | -45°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | L6388ED013TR | |
| Mount Type | Surface | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Package Type SO-8 | ||
Fall Time 40ns | ||
Driver Type High Side | ||
Number of Outputs 2 | ||
Rise Time 70ns | ||
Minimum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 17V | ||
Minimum Operating Temperature -45°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series L6388ED013TR | ||
Mount Type Surface | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the dead time function.
Internal bootstrap diode
Outputs in phase with inputs
Dead time and interlocking function
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