STMicroelectronics L6387ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17V, SO-8

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Subtotal 50 units (supplied on a continuous strip)*

TWD2,640.00

(exc. GST)

TWD2,772.00

(inc. GST)

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  • 2,430 unit(s) ready to ship from another location
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Units
Per unit
50 - 95TWD52.80
100 - 495TWD51.60
500 - 995TWD50.60
1000 +TWD49.40

*price indicative

Packaging Options:
RS Stock No.:
152-015P
Mfr. Part No.:
L6387ED013TR
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Gate Driver Module

Output Current

650mA

Pin Count

8

Package Type

SO-8

Fall Time

30ns

Number of Outputs

2

Driver Type

High Side

Rise Time

50ns

Minimum Supply Voltage

17V

Maximum Supply Voltage

17V

Number of Drivers

2

Minimum Operating Temperature

-50°C

Maximum Operating Temperature

150°C

Series

L6387ED013TR

Standards/Approvals

RoHS Compliant

Mount Type

Surface

COO (Country of Origin):
CN
The STMicroelectronics simple and Compact high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function.

Internal bootstrap diode

Outputs in phase with inputs

Interlocking function

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