Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin SOIC, FM25V02A-G
- RS Stock No.:
- 273-7388
- Mfr. Part No.:
- FM25V02A-G
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 97 units)*
TWD16,829.50
(exc. GST)
TWD17,671.46
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 873 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | TWD173.50 | TWD16,829.50 |
| 194 + | TWD168.30 | TWD16,325.10 |
*price indicative
- RS Stock No.:
- 273-7388
- Mfr. Part No.:
- FM25V02A-G
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kB | |
| Product Type | Serial (SPI) F-RAM | |
| Organisation | 32k x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2V | |
| Automotive Standard | No | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 32k | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kB | ||
Product Type Serial (SPI) F-RAM | ||
Organisation 32k x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2V | ||
Automotive Standard No | ||
Minimum Operating Temperature -40°C | ||
Number of Words 32k | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Related links
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