Infineon 128 kB Serial-SPI FRAM 8-Pin SOIC-8, CY15B128Q-SXE
- RS Stock No.:
- 273-7321
- Mfr. Part No.:
- CY15B128Q-SXE
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD328.00
(exc. GST)
TWD344.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 33 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD328.00 |
| 10 - 24 | TWD323.00 |
| 25 - 49 | TWD316.00 |
| 50 - 99 | TWD309.00 |
| 100 + | TWD303.00 |
*price indicative
- RS Stock No.:
- 273-7321
- Mfr. Part No.:
- CY15B128Q-SXE
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 128kB | |
| Organisation | 16K x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 33MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 125°C | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 16k | |
| Maximum Supply Voltage | 3.6V | |
| Automotive Standard | AEC-Q100 Grade 1 | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 128kB | ||
Organisation 16K x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 33MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 125°C | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 16k | ||
Maximum Supply Voltage 3.6V | ||
Automotive Standard AEC-Q100 Grade 1 | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM is a 128 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.
RoHS compliant
Low voltage operation
Low power consumption
AEC Q100 Grade 1 compliant
Sophisticated write protection scheme
Software protection using write disable instruction
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