Infineon 4 MB SPI FRAM 8-Pin SOIC, CY15B104Q-SXI
- RS Stock No.:
- 188-5304
- Mfr. Part No.:
- CY15B104Q-SXI
- Manufacturer:
- Infineon
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TWD101,726.80
(exc. GST)
TWD106,813.14
(inc. GST)
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In Stock
- 564 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 94 - 94 | TWD1,082.20 | TWD101,726.80 | - |
| 188 + | TWD1,058.40 | TWD99,489.60 | 2% |
*price indicative
- RS Stock No.:
- 188-5304
- Mfr. Part No.:
- CY15B104Q-SXI
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4MB | |
| Organisation | 512 k x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 5.33mm | |
| Length | 5.33mm | |
| Height | 1.78mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Number of Words | 512K | |
| Minimum Supply Voltage | 2V | |
| Automotive Standard | No | |
| Minimum Operating Temperature | -40°C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 4MB | ||
Organisation 512 k x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 5.33mm | ||
Length 5.33mm | ||
Height 1.78mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Number of Words 512K | ||
Minimum Supply Voltage 2V | ||
Automotive Standard No | ||
Minimum Operating Temperature -40°C | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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