Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN, FM24CL16B-DG

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Subtotal (1 pack of 5 units)*

TWD315.00

(exc. GST)

TWD330.75

(inc. GST)

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Units
Per unit
Per Pack*
5 - 15TWD63.00TWD315.00
20 - 35TWD61.60TWD308.00
40 +TWD57.60TWD288.00

*price indicative

Packaging Options:
RS Stock No.:
125-4211
Mfr. Part No.:
FM24CL16B-DG
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

16kB

Organisation

2K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

3000ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

DFN

Pin Count

8

Height

0.75mm

Standards/Approvals

No

Length

4.5mm

Width

4 mm

Maximum Operating Temperature

85°C

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Number of Words

2k

Minimum Operating Temperature

-40°C

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

3.65V

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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