Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM18W08-SG
- RS Stock No.:
- 125-4205
- Mfr. Part No.:
- FM18W08-SG
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 unit)*
TWD431.00
(exc. GST)
TWD452.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 10 unit(s) shipping from July 06, 2026
- Plus 73 unit(s) shipping from July 13, 2026
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Units | Per unit |
|---|---|
| 1 - 6 | TWD431.00 |
| 7 - 13 | TWD420.00 |
| 14 + | TWD406.00 |
*price indicative
- RS Stock No.:
- 125-4205
- Mfr. Part No.:
- FM18W08-SG
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 256kB | |
| Organisation | 32K x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Maximum Clock Frequency | 1MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 28 | |
| Width | 7.62mm | |
| Standards/Approvals | No | |
| Length | 18.11mm | |
| Height | 2.37mm | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 5.5V | |
| Automotive Standard | AEC-Q100 | |
| Number of Words | 32k | |
| Minimum Supply Voltage | 2.7V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 256kB | ||
Organisation 32K x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Maximum Clock Frequency 1MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 28 | ||
Width 7.62mm | ||
Standards/Approvals No | ||
Length 18.11mm | ||
Height 2.37mm | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 5.5V | ||
Automotive Standard AEC-Q100 | ||
Number of Words 32k | ||
Minimum Supply Voltage 2.7V | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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