Infineon NOR 1 GB Parallel GL-T MIRRORBITTM Flash Parallel 48-Pin TSOP-56
- RS Stock No.:
- 273-5429
- Mfr. Part No.:
- S29GL01GT10FHI010
- Manufacturer:
- Infineon
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TWD484.00
(exc. GST)
TWD508.20
(inc. GST)
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In Stock
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Units | Per unit |
|---|---|
| 1 - 9 | TWD484.00 |
| 10 - 24 | TWD457.00 |
| 25 - 49 | TWD444.00 |
| 50 - 74 | TWD435.00 |
| 75 + | TWD426.00 |
*price indicative
- RS Stock No.:
- 273-5429
- Mfr. Part No.:
- S29GL01GT10FHI010
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 1GB | |
| Product Type | GL-T MIRRORBITTM Flash Parallel | |
| Interface Type | Parallel | |
| Package Type | TSOP-56 | |
| Pin Count | 48 | |
| Organisation | 120MB | |
| Maximum Clock Frequency | 5MHz | |
| Cell Type | NOR | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Supply Current | 100mA | |
| Maximum Random Access Time | 130ns | |
| Number of Bits per Word | 16 | |
| Automotive Standard | AEC-Q100 Grade 2 & 3 | |
| Series | S29GL | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 1GB | ||
Product Type GL-T MIRRORBITTM Flash Parallel | ||
Interface Type Parallel | ||
Package Type TSOP-56 | ||
Pin Count 48 | ||
Organisation 120MB | ||
Maximum Clock Frequency 5MHz | ||
Cell Type NOR | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Supply Current 100mA | ||
Maximum Random Access Time 130ns | ||
Number of Bits per Word 16 | ||
Automotive Standard AEC-Q100 Grade 2 & 3 | ||
Series S29GL | ||
The Infineon Flash Memory is fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a write buffer that allows a maximum of 256 words or 512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.
20 year data retention
Advanced sector protection
512 byte programming buffer
100000 program and erase cycles
Asynchronous 32 byte page read
Common flash interface parameter table
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