Infineon NOR 256 MB CFI Flash Memory 64-Pin BGA
- RS Stock No.:
- 193-8866
- Mfr. Part No.:
- S29GL256P11FFIV20
- Manufacturer:
- Infineon
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 193-8866
- Mfr. Part No.:
- S29GL256P11FFIV20
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256MB | |
| Product Type | Flash Memory | |
| Interface Type | CFI | |
| Package Type | BGA | |
| Pin Count | 64 | |
| Organisation | 32M x 8 Bit | |
| Mount Type | Surface | |
| Cell Type | NOR | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Width | 11 mm | |
| Length | 13mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Number of Words | 32M | |
| Series | S29GL256P | |
| Number of Bits per Word | 8 | |
| Supply Current | 110mA | |
| Maximum Random Access Time | 110ns | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256MB | ||
Product Type Flash Memory | ||
Interface Type CFI | ||
Package Type BGA | ||
Pin Count 64 | ||
Organisation 32M x 8 Bit | ||
Mount Type Surface | ||
Cell Type NOR | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Width 11 mm | ||
Length 13mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Number of Words 32M | ||
Series S29GL256P | ||
Number of Bits per Word 8 | ||
Supply Current 110mA | ||
Maximum Random Access Time 110ns | ||
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption.
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