onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

RS Stock No.:: 862-4954
Mfr. Part No.:: MJ11012G
Manufacturer:: onsemi

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

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Bulk discount available

Subtotal (1 pack of 2 units)**

TWD521.00

(exc. GST)

TWD547.04

(inc. GST)

2 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Pack**
2 - 24	TWD260.50	TWD521.00
26 - 48	TWD229.50	TWD459.00
50 +	TWD225.50	TWD451.00

**price indicative

RS Stock No.:: 862-4954
Mfr. Part No.:: MJ11012G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	60 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204AA
Mounting Type	Through Hole
Pin Count	2
Transistor Configuration	Single
Number of Elements per Chip	2
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	60 V
Maximum Collector Emitter Saturation Voltage	4 V
Minimum Operating Temperature	-55 °C
Dimensions	21.08 (Dia.) x 8.51mm
Maximum Power Dissipation	200 W
Height	8.51mm
Maximum Operating Temperature	+200 °C

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

FREE delivery for orders over TWD2,857.00 (ex VAT)

NPN Darlington Transistors, ON Semiconductor

Standards