onsemi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

RS Stock No.:: 781-4279
Mfr. Part No.:: MMBTA13LT1G
Manufacturer:: onsemi

onsemi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

Bulk discount available

Price Each (In a Pack of 100)**

TWD1.50

(exc. GST)

TWD1.58

(inc. GST)

10985 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Pack**
100 - 700	TWD1.50	TWD150.00
800 - 1400	TWD1.50	TWD150.00
1500 +	TWD1.40	TWD140.00

**price indicative

RS Stock No.:: 781-4279
Mfr. Part No.:: MMBTA13LT1G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	300 mA
Maximum Collector Emitter Voltage	30 V
Maximum Emitter Base Voltage	10 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	2
Minimum DC Current Gain	5000
Maximum Base Emitter Saturation Voltage	1.5 V
Maximum Collector Base Voltage	30 V
Maximum Collector Emitter Saturation Voltage	1.5 V
Maximum Collector Cut-off Current	100nA
Height	1.01mm
Width	1.4mm
Dimensions	3.04 x 1.4 x 1.01mm
Maximum Operating Temperature	+150 °C
Length	3.04mm
Minimum Operating Temperature	-55 °C
Maximum Power Dissipation	300 mW

onsemi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

FREE delivery for orders over TWD2,857.00 (ex VAT)

NPN Darlington Transistors, ON Semiconductor

Standards