onsemi MJD45H11G Transistor, -8 A PNP, -80 V, 3-Pin DPAK
- RS Stock No.:
- 838-633
- Mfr. Part No.:
- MJD45H11G
- Manufacturer:
- onsemi
N
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 bag of 10 units)*
TWD251.00
(exc. GST)
TWD263.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from December 24, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 10 - 90 | TWD25.10 | TWD251.00 |
| 100 - 490 | TWD22.10 | TWD221.00 |
| 500 - 990 | TWD19.80 | TWD198.00 |
| 1000 + | TWD17.00 | TWD170.00 |
*price indicative
- RS Stock No.:
- 838-633
- Mfr. Part No.:
- MJD45H11G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -8A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-252 | |
| Mount Type | Surface Mount | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -80V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 40MHz | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Power Dissipation Pd | 20mW | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | No | |
| Series | MJD45H | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -8A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-252 | ||
Mount Type Surface Mount | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -80V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 40MHz | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Power Dissipation Pd 20mW | ||
Transistor Polarity PNP | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals No | ||
Series MJD45H | ||
Automotive Standard No | ||
The onsemi semiconductor device offers power management for switching applications, specifically engineered for reliable performance in various circuits.
Supports a maximum collector-emitter voltage of 80 Vdc for robust applications
Delivers a continuous collector current of 8 Adc, ensuring effective power handling
Features low collector-emitter saturation voltage for enhanced efficiency
Design incorporates complementary pairs, simplifying circuit designs
Related links
- onsemi Transistor -80 V, 3-Pin DPAK
- onsemi MJD45H11T4G Transistor -80 V, 3-Pin DPAK
- STMicroelectronics Transistor 80 V, 3-Pin DPAK
- STMicroelectronics MJD45H11T4 Transistor 80 V, 3-Pin DPAK
- onsemi Transistor 80 V, 3-Pin DPAK
- onsemi NJVMJD44H11T4G Transistor 80 V, 3-Pin DPAK
- ROHM 2SAR586D3TL1 Transistor -80 V, 3-Pin DPAK
- onsemi MJD44H11T4G Transistor 80 V, 3-Pin DPAK