JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 761-3688
Mfr. Part No.MMBFJ201
TWD10.30
Each (In a Pack of 25)
units
N 0.3 to 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 166-1840
Mfr. Part No.MMBFJ201
TWD3.60
Each (On a Reel of 3000)
units
N 0.3 to 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 170-3357
Mfr. Part No.MMBFJ310LT1G
TWD5.10
Each (On a Reel of 3000)
units
N 24 to 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 145-4270
Mfr. Part No.MMBF4393LT1G
TWD3.60
Each (On a Reel of 3000)
units
N 5 to 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14pF 14pF 3.04 x 1.4 x 1.01mm
RS Stock No. 163-2023
Mfr. Part No.2SK932-22-TB-E
TWD5.90
Each (On a Reel of 3000)
units
N 7.3 to 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-1753
Mfr. Part No.J111
TWD10.70
Each (In a Pack of 50)
units
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 625-5745
Mfr. Part No.MMBFJ310LT1G
TWD19.00
Each (In a Pack of 5)
units
N 24 to 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 864-7846
Mfr. Part No.MMBF4393LT1G
TWD11.50
Each (In a Pack of 50)
units
N 5 to 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14pF 14pF 3.04 x 1.4 x 1.01mm
RS Stock No. 773-7813
Mfr. Part No.MMBFJ310LT3G
TWD13.20
Each (In a Pack of 10)
units
N 24 to 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 163-0964
Mfr. Part No.MMBFJ309LT1G
TWD5.10
Each (On a Reel of 3000)
units
N 12 to 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 773-7819
Mfr. Part No.MMBFJ309LT1G
TWD14.60
Each (In a Pack of 10)
units
N 12 to 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 163-2021
Mfr. Part No.2SK3557-7-TB-E
TWD5.50
Each (On a Reel of 3000)
units
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5170
Mfr. Part No.2SK932-22-TB-E
TWD17.60
Each (In a Pack of 25)
units
N 7.3 to 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-1750
Mfr. Part No.J109
TWD12.40
Each (In a Pack of 25)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 166-2910
Mfr. Part No.J111
TWD3.00
Each (In a Bag of 10000)
units
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1757
Mfr. Part No.J112
TWD11.00
Each (In a Pack of 50)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 792-5167
Mfr. Part No.2SK3557-7-TB-E
TWD14.00
Each (In a Pack of 20)
units
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 122-0136
Mfr. Part No.MMBFJ310LT3G
TWD4.40
Each (On a Reel of 10000)
units
N 24 to 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 124-1385
Mfr. Part No.J112
TWD4.00
Each (In a Bag of 1000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-2021
Mfr. Part No.J109
TWD5.80
Each (In a Bag of 1000)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm