IGBTs | Insulated Gate Bipolar Transistor | RS
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    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2274 Products showing for IGBTs

    Littelfuse
    50 A
    365 V
    ±15V
    165 W
    -
    -
    D2PAK (TO-263)
    Surface Mount
    N
    3
    -
    Single
    10.29 x 9.65 x 4.83mm
    onsemi
    80 A
    650 V
    ±30.0V
    238 W
    30
    -
    TO-247
    -
    N
    3
    -
    Single
    -
    onsemi
    80 A
    650 V
    ±30.0V
    238 W
    30
    -
    TO-247
    -
    N
    3
    -
    Single
    -
    Toshiba
    50 A
    600 V
    ±25V
    230 W
    -
    -
    TO-3P
    Through Hole
    N
    3
    1MHz
    Single
    15.5 x 4.5 x 20mm
    STMicroelectronics
    -
    650 V
    ±30V
    167 W
    1
    -
    TO-247 long leads
    -
    N
    3
    -
    Series
    -
    Infineon
    450 A
    1200 V
    ±20V
    2.4 kW
    -
    Common Emitter
    CTI
    Panel Mount
    -
    7
    -
    -
    -
    STMicroelectronics
    60 A
    600 V
    ±20V
    260 W
    -
    -
    TO-3P
    Through Hole
    N
    3
    -
    Single
    15.8 x 5 x 14.1mm
    STMicroelectronics
    40 A
    650 V
    ±20V
    45 W
    1
    -
    TO-220FP
    -
    -
    3
    -
    -
    -
    STMicroelectronics
    40 A
    650 V
    ±20V
    45 W
    1
    -
    TO-220FP
    -
    -
    3
    -
    -
    -
    Fuji Electric
    50 A
    1200 V
    ±20V
    280 W
    -
    3 Phase Bridge
    M712
    Through Hole
    N
    24
    -
    3 Phase
    122 x 62 x 17mm
    Semikron
    232 A
    1200 V
    ±20V
    -
    -
    Dual Half Bridge
    SEMITRANS2
    Panel Mount
    N
    7
    -
    Series
    94 x 34 x 30.1mm
    STMicroelectronics
    30 A
    650 V
    ±20V
    260 W
    1
    -
    TO-247
    -
    N
    3
    -
    Common Emitter
    -
    STMicroelectronics
    30 A
    650 V
    ±20V
    260 W
    1
    -
    TO-247
    -
    N
    3
    -
    Common Emitter
    -
    Semikron
    1.1 kA
    1200 V
    20V
    -
    -
    Series
    SEMiX®3p
    Through Hole
    N
    11
    -
    Series
    150 x 62.4 x 17mm
    Infineon
    580 A
    1200 V
    ±20V
    2.4 kW
    -
    Series
    62MM Module
    Panel Mount
    N
    3
    -
    Series
    106.4 x 61.4 x 30.9mm
    Infineon
    40 A
    600 V
    ±20V
    166 W
    -
    -
    PG-TO247-3
    -
    -
    3
    -
    -
    -
    onsemi
    120 A
    650 V
    ±20V
    600 W
    -
    -
    TO-3PN
    Through Hole
    N
    3
    -
    Single
    15.8 x 5 x 20.1mm
    Infineon
    580 A
    1200 V
    ±20V
    2.4 kW
    -
    Series
    62MM Module
    Panel Mount
    N
    3
    -
    Series
    106.4 x 61.4 x 30.9mm
    Infineon
    160 A
    650 V
    ±20V
    498 W
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-4-PLUS-NN5.1
    Through Hole
    N
    4
    -
    -
    -
    Infineon
    100 A
    1200 V
    ±20V
    824 W
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-3-PLUS-N
    Through Hole
    N
    3
    -
    -
    -
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