Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 20 MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) Sophisticated write protection scheme Hardware protection using the Write Protect (WP) pin Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array Low power consumption 250 μA active current at 1 MHz 4 μA (typ) standby current Voltage operation: VDD = 4.5 V to 5.5 V Industrial temperature: –40 °C to +85 °C 8-pin small outline integrated circuit (SOIC) package
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FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.