STMicroelectronics, Type N-Channel IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole

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TWD76.00

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TWD79.80

(inc. GST)

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  • Plus 12 unit(s) shipping from March 30, 2026
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Per unit
Per Pack*
2 - 12TWD38.00TWD76.00
14 - 24TWD37.00TWD74.00
26 +TWD36.50TWD73.00

*price indicative

Packaging Options:
RS Stock No.:
686-8366
Mfr. Part No.:
STGP7NC60HD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

25A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

80W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.15mm

Length

10.4mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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