Infineon IKZA75N65SS5XKSA1 Hybrid Discrete Diode, 75 A 650 V, 4-Pin PG-TO247-4-3, Through Hole
- RS Stock No.:
- 273-2993
- Mfr. Part No.:
- IKZA75N65SS5XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 30 units)*
TWD8,580.00
(exc. GST)
TWD9,009.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 11, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD286.00 | TWD8,580.00 |
| 60 + | TWD280.20 | TWD8,406.00 |
*price indicative
- RS Stock No.:
- 273-2993
- Mfr. Part No.:
- IKZA75N65SS5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Hybrid Discrete Diode | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | PG-TO247-4-3 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.9mm | |
| Width | 15.7 mm | |
| Height | 4.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Hybrid Discrete Diode | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 395W | ||
Package Type PG-TO247-4-3 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.9mm | ||
Width 15.7 mm | ||
Height 4.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IGBT discrete with silicon carbide schottky diode has ultra low switching losses due to the combination of TRENCHSTOP 5 and CoolSiC diode technology as well as the kelvin emitter package.
Highest efficiency
Reduced cooling effort
Increased power density