Infineon, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 31-Pin EconoPIM2, Panel
- RS Stock No.:
- 273-2928
- Mfr. Part No.:
- FP75R12N2T7BPSA2
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
TWD2,803.00
(exc. GST)
TWD2,943.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 15 unit(s) shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | TWD2,803.00 |
| 5 - 9 | TWD2,746.00 |
| 10 - 24 | TWD2,548.00 |
| 25 - 49 | TWD2,498.00 |
| 50 + | TWD2,448.00 |
*price indicative
- RS Stock No.:
- 273-2928
- Mfr. Part No.:
- FP75R12N2T7BPSA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Common Emitter | |
| Package Type | EconoPIM2 | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.77V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 45 mm | |
| Length | 107.5mm | |
| Height | 20.5mm | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Common Emitter | ||
Package Type EconoPIM2 | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 31 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.77V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 45 mm | ||
Length 107.5mm | ||
Height 20.5mm | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Automotive Standard No | ||
The Infineon three phase PIM IGBT module with IGBT7, emitter controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.
High reliability and power density
Copper base plate for optimized heat spread
High power density
Solder contact technology