Infineon, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 232-6731
- Mfr. Part No.:
- IKW50N120CS7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 30 units)*
TWD4,053.00
(exc. GST)
TWD4,255.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 210 unit(s) shipping from April 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD135.10 | TWD4,053.00 |
| 60 - 60 | TWD131.70 | TWD3,951.00 |
| 90 + | TWD129.10 | TWD3,873.00 |
*price indicative
- RS Stock No.:
- 232-6731
- Mfr. Part No.:
- IKW50N120CS7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 428W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.3 mm | |
| Length | 21.5mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 5.3mm | |
| Series | IKW50N120CS7 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 428W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.3 mm | ||
Length 21.5mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 5.3mm | ||
Series IKW50N120CS7 | ||
Automotive Standard No | ||
The Infineon's 50 A TRENCHSTOP IGBT7 S7 discrete comes in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contributing to overall low total losses. Potential applications include industrial drives, industrial power supplies and solar inverters.
Good controllability
Full rated free wheeling diode with improved softness
Higher power density without heatsink redesign
Ease to design to meet EMI requirement
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