Infineon IKW30N65H5XKSA1, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6673
- Distrelec Article No.:
- 304-31-965
- Mfr. Part No.:
- IKW30N65H5XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD617.00
(exc. GST)
TWD647.85
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 50 unit(s) shipping from April 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD123.40 | TWD617.00 |
| 10 - 95 | TWD120.20 | TWD601.00 |
| 100 - 245 | TWD117.20 | TWD586.00 |
| 250 - 495 | TWD114.40 | TWD572.00 |
| 500 + | TWD111.60 | TWD558.00 |
*price indicative
- RS Stock No.:
- 215-6673
- Distrelec Article No.:
- 304-31-965
- Mfr. Part No.:
- IKW30N65H5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 55A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Length | 42mm | |
| Height | 5.21mm | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 55A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Length 42mm | ||
Height 5.21mm | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference