Infineon, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 215-6662
- Mfr. Part No.:
- IKP40N65H5XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD2,840.00
(exc. GST)
TWD2,982.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 400 unit(s) shipping from August 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | TWD56.80 | TWD2,840.00 |
| 150 - 200 | TWD55.70 | TWD2,785.00 |
| 250 + | TWD54.60 | TWD2,730.00 |
*price indicative
- RS Stock No.:
- 215-6662
- Mfr. Part No.:
- IKP40N65H5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT in TRENCHSTOP TM 5 Technology | |
| Maximum Continuous Collector Current Ic | 74A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT in TRENCHSTOP TM 5 Technology | ||
Maximum Continuous Collector Current Ic 74A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon IKP40N65H5XKSA1 74 A 650 V Through Hole
- Infineon 74 A 650 V Through Hole
- Infineon 74 A 650 V Through Hole
- Infineon 74 A 650 V Surface
- Infineon 74 A 650 V Surface
- Infineon IKP40N65F5XKSA1 74 A 650 V Through Hole
- Infineon IGP40N65H5XKSA1 74 A 650 V Through Hole
- Infineon AIKW40N65DF5XKSA1 74 A 650 V Through Hole