STMicroelectronics, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface

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TWD50,500.00

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TWD53,020.00

(inc. GST)

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1000 - 4000TWD50.50TWD50,500.00
5000 +TWD49.50TWD49,500.00

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RS Stock No.:
204-9867
Mfr. Part No.:
STGB30H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

167W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Length

10.4mm

Width

9.35 mm

Standards/Approvals

No

Series

Trench Gate Field Stop

Height

4.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

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