ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

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Subtotal (1 pack of 5 units)*

TWD294.00

(exc. GST)

TWD308.70

(inc. GST)

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Last RS stock
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Units
Per unit
Per Pack*
5 - 45TWD58.80TWD294.00
50 - 95TWD57.20TWD286.00
100 - 245TWD55.80TWD279.00
250 - 495TWD54.60TWD273.00
500 +TWD53.20TWD266.00

*price indicative

RS Stock No.:
171-5593
Mfr. Part No.:
RGT30NS65DGC9
Manufacturer:
ROHM
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Brand

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

133 W

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

COO (Country of Origin):
JP
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating

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