ROHM BD2320EFJ-LAE2 MOSFET Gate Driver, 4.5 A 32 V, HTSOP-J8

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Subtotal (1 pack of 2 units)*

TWD169.00

(exc. GST)

TWD177.44

(inc. GST)

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  • Plus 32 unit(s) shipping from May 25, 2026
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Units
Per unit
Per Pack*
2 - 48TWD84.50TWD169.00
50 - 98TWD80.00TWD160.00
100 - 248TWD75.50TWD151.00
250 - 998TWD70.00TWD140.00
1000 +TWD65.00TWD130.00

*price indicative

Packaging Options:
RS Stock No.:
255-7660
Mfr. Part No.:
BD2320EFJ-LAE2
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Output Current

4.5A

Package Type

HTSOP-J8

Fall Time

6ns

Driver Type

MOSFET

Minimum Supply Voltage

32V

Maximum Supply Voltage

32V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Series

BD2320E

Standards/Approvals

No

Mount Type

PCB

Automotive Standard

No

The ROHM High frequency high-side and low-side driver is 100 V maximum voltage high-side and low-side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode and independent inputs control for high-side and low-side. 3.3 V and 5.0 V are available for interface voltage. Under voltage lockout circuits are built in for high-side and low-side.

Long time support product for industrial applications

Under Voltage Lockout (UVLO) for high-side and low-side driver

3.3 V and 5.0 V interface voltage

Output In-phase with input signal

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