Cypress Semiconductor, CY62128EV30LL-45Z

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Temperature ranges:
Industrial: –40 °C to +85 °C
Wide voltage range: 2.2 V to 3.6 V
Pin compatible with CY62128DV30
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 4 μA
Ultra low active power
Typical active current: 1.3 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Offered in Pb-free 32-pin small outline integrated circuit (SOIC),32-pin thin small outline package (TSOP) Type I, and 32-pin shrunk thin small outline package (STSOP) packages

SRAM (Static Random Access Memory)

Specifications
Attribute Value
Memory Size 1Mbit
Organisation 128k x 8 bit
Number of Words 128k
Number of Bits per Word 8bit
Maximum Random Access Time 45ns
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type STSOP
Pin Count 32
Dimensions 11.9 x 8.1 x 1.05mm
Height 1.05mm
Minimum Operating Supply Voltage 2.2 V
Width 8.1mm
Minimum Operating Temperature -40 °C
Length 11.9mm
Maximum Operating Supply Voltage 3.6 V
Maximum Operating Temperature +85 °C
Temporarily out of stock - back order for despatch 15/06/2020, delivery within 6 working days
Price (VAT excluded) Each (In a Tray of 234)
TWD 65.10
(exc. GST)
TWD 68.40
(inc. GST)
units
Per unit
Per Tray*
234 - 234
TWD65.10
TWD15,233.40
468 - 468
TWD64.50
TWD15,093.00
702 - 936
TWD62.80
TWD14,695.20
1170 +
TWD61.10
TWD14,297.40
*price indicative