Cypress Semiconductor, CY14B108N-BA25XI

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512 K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Attribute Value
Memory Size 8Mbit
Organisation 512K x 16 bit
Interface Type Parallel
Data Bus Width 16bit
Maximum Random Access Time 45ns
Mounting Type Surface Mount
Package Type FBGA
Pin Count 48
Dimensions 10 x 6 x 0.21mm
Length 10mm
Width 6mm
Height 0.21mm
Maximum Operating Supply Voltage 3.6 V
Maximum Operating Temperature +85 °C
Number of Words 512K
Number of Bits per Word 16bit
Minimum Operating Supply Voltage 2.7 V
Minimum Operating Temperature -40 °C
Temporarily out of stock - back order for despatch 06/05/2020, delivery within 6 working days
Price (VAT excluded) Each
TWD 2,537.00
(exc. GST)
TWD 2,664.00
(inc. GST)
Per unit
1 - 9
10 - 24
25 - 49
50 - 99
100 +
Packaging Options: