DS1230AB-70IND+,NVRAM

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

10 years minimum data retention in the absence of external powerData is automatically protected during power lossReplaces 32k x 8 volatile static RAM, EEPROM or Flash memoryUnlimited write cyclesLow-power CMOSRead and write access times of 70nsLithium energy source is electrically disconnected to retain freshness until power is applied for the first timeFull ±10% VCC operating range (DS1230Y)Optional ±5% VCC operating range (DS1230AB)Optional Industrial temperature range of -40°C to +85°C, designated IND28-pin DIP packagePowerCap Module (PCM) packageDirectly surface-mountable moduleReplaceable snap-on PowerCap provides lithium backup batteryStandardized pinout for all nonvolatile SRAM productsDetachment feature on PowerCap allows easy removal using a regular screwdriver

Specifications
Attribute Value
Memory Size 256kbit
Organisation 32K x 8
Maximum Random Access Time 70ns
Mounting Type Through Hole
Package Type EDIP
Pin Count 28
Dimensions 39.37 x 18.8 x 10.67mm
Length 39.37mm
Width 18.8mm
Height 10.67mm
Maximum Operating Supply Voltage 5.25 V
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 4.75 V
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Number of Words 32K
48 In stock for delivery within 6 working days
Price (VAT excluded) Each (In a Tube of 12)
TWD 1,163.90
(exc. GST)
TWD 1,222.10
(inc. GST)
units
Per unit
Per Tube*
12 - 24
TWD1,163.90
TWD13,966.80
36 - 48
TWD1,099.60
TWD13,195.20
60 - 96
TWD967.10
TWD11,605.20
108 - 240
TWD922.80
TWD11,073.60
252 +
TWD876.80
TWD10,521.60
*price indicative