IXFB210N30P3 N-Channel MOSFET, 210 A, 300 V HiperFET, Polar3, 3-Pin PLUS264 IXYS

  • RS Stock No. 920-0987
  • Mfr. Part No. IXFB210N30P3
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 210 A
Maximum Drain Source Voltage 300 V
Package Type PLUS264
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 14.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Maximum Power Dissipation 1.89 kW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 5.31mm
Transistor Material Si
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 268 nC @ 10 V
Maximum Operating Temperature +150 °C
Series HiperFET, Polar3
Height 26.59mm
Length 20.29mm
25 In stock for delivery within 6 working days
Price (VAT excluded) Each (In a Tube of 25)
TWD 631.60
(exc. GST)
TWD 663.20
(inc. GST)
units
Per unit
Per Tube*
25 - 25
TWD631.60
TWD15,790.00
50 - 75
TWD627.20
TWD15,680.00
100 - 225
TWD609.80
TWD15,245.00
250 - 475
TWD590.20
TWD14,755.00
500 +
TWD589.70
TWD14,742.50
*price indicative