IXFK48N50 N-Channel MOSFET, 48 A, 500 V HiperFET, 3-Pin TO-264AA IXYS

  • RS Stock No. 920-0870
  • Mfr. Part No. IXFK48N50
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-channel Power MOSFET, IXYS HiperFET™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 48 A
Maximum Drain Source Voltage 500 V
Package Type TO-264AA
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 100 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Maximum Power Dissipation 500 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Transistor Material Si
Length 19.96mm
Width 5.13mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 270 nC @ 10 V
Height 26.16mm
Series HiperFET
Maximum Operating Temperature +150 °C
175 In stock for delivery within 6 working days
Price (VAT excluded) Each (In a Tube of 25)
TWD 647.40
(exc. GST)
TWD 679.80
(inc. GST)
units
Per unit
Per Tube*
25 - 25
TWD647.40
TWD16,185.00
50 - 75
TWD622.60
TWD15,565.00
100 - 225
TWD607.30
TWD15,182.50
250 - 475
TWD587.00
TWD14,675.00
500 +
TWD572.20
TWD14,305.00
*price indicative