SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D

RS Stock No.:: 915-8818
Mfr. Part No.:: C2M0025120D
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D

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73 In stock for delivery within 6 working days

Added

Price (VAT excluded) Each

TWD2,577.00

(exc. GST)

TWD2,705.85

(inc. GST)

Units	Per unit
1 - 7	TWD2,577.00
8 +	TWD2,514.00

RS Stock No.:: 915-8818
Mfr. Part No.:: C2M0025120D
Manufacturer:: Wolfspeed

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	90 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	34 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	463 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+25 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	21.1mm
Length	16.13mm
Typical Gate Charge @ Vgs	161 nC @ 20 V
Transistor Material	SiC
Forward Diode Voltage	3.3V
Height	5.21mm
Minimum Operating Temperature	-55 °C