Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

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76800 In stock for delivery within 6 working days

Added

Price (VAT excluded) Each (In a Pack of 100)

TWD10.80

(exc. GST)

TWD11.34

(inc. GST)

Product overview and Technical data sheets

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MOSFET Transistors, Diodes Inc.

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	1.6mm
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	2.9mm
Transistor Material	Si
Height	0.9mm
Minimum Operating Temperature	-55 °C