IXFB210N30P3 N-Channel MOSFET, 210 A, 300 V HiperFET, Polar3, 3-Pin PLUS264 IXYS

  • RS Stock No. 802-4357P
  • Mfr. Part No. IXFB210N30P3
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 210 A
Maximum Drain Source Voltage 300 V
Package Type PLUS264
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 14.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Maximum Power Dissipation 1.89 kW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Series HiperFET, Polar3
Maximum Operating Temperature +150 °C
Length 20.29mm
Transistor Material Si
Width 5.31mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 268 nC @ 10 V
Height 26.59mm
29 In stock for delivery within 6 working days
Price (VAT excluded) Each (Supplied in a Tube)
TWD 679.00
(exc. GST)
TWD 713.00
(inc. GST)
units
Per unit
10 - 49
TWD679.00
50 - 99
TWD644.00
100 - 249
TWD612.00
250 +
TWD581.00
Packaging Options: