N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2
- RS Stock No.:
- 752-7773
- Mfr. Part No.:
- 2N7002H6327XTSA2
- Manufacturer:
- Infineon
4100 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Pack of 100)
TWD2.70
(exc. GST)
TWD2.84
(inc. GST)
| Units | Per unit | Per Pack* |
| 100 - 700 | TWD2.70 | TWD270.00 |
| 800 - 1400 | TWD2.70 | TWD270.00 |
| 1500 + | TWD2.50 | TWD250.00 |
| *price indicative | ||
- RS Stock No.:
- 752-7773
- Mfr. Part No.:
- 2N7002H6327XTSA2
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Series | OptiMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Transistor Material | Si |
| Width | 1.3mm |
| Length | 2.9mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |