IXFK48N50 N-Channel MOSFET, 48 A, 500 V HiperFET, 3-Pin TO-264AA IXYS

  • RS Stock No. 711-5367P
  • Mfr. Part No. IXFK48N50
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-channel Power MOSFET, IXYS HiperFET™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Attribute Value
Channel Type N
Maximum Continuous Drain Current 48 A
Maximum Drain Source Voltage 500 V
Package Type TO-264AA
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 100 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Maximum Power Dissipation 500 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 26.16mm
Series HiperFET
Maximum Operating Temperature +150 °C
Length 19.96mm
Transistor Material Si
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 270 nC @ 10 V
Width 5.13mm
193 In stock for delivery within 6 working days
Price (VAT excluded) Each (Supplied in a Tube)
TWD 608.00
(exc. GST)
TWD 638.00
(inc. GST)
Per unit
5 - 9
10 - 19
20 +
Packaging Options: