BS170 N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 500 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 830 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Length 5.2mm
Minimum Operating Temperature -55 °C
Width 4.19mm
Transistor Material Si
Height 5.33mm
540 Within 2 working day(s) (local stock)
2800 Within 6 working day(s) (Global stock)
Price (VAT excluded) Each (In a Pack of 10)
TWD 10.50
(exc. GST)
TWD 11.00
(inc. GST)
units
Per unit
Per Pack*
10 - 10
TWD10.50
TWD105.00
20 - 40
TWD10.40
TWD104.00
50 - 90
TWD10.30
TWD103.00
100 - 190
TWD6.30
TWD63.00
200 +
TWD6.20
TWD62.00
*price indicative
Packaging Options: