IRFD120PBF N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay

  • RS Stock No. 178-0921
  • Mfr. Part No. IRFD120PBF
  • Manufacturer Vishay
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1.3 A
Maximum Drain Source Voltage 100 V
Package Type HVMDIP
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 270 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 1.3 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 3.37mm
Width 6.29mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 16 nC @ 10 V
Transistor Material Si
Length 5mm
Maximum Operating Temperature +175 °C
1400 In stock for delivery within 6 working days
Price (VAT excluded) Each (In a Tube of 100)
TWD 19.70
(exc. GST)
TWD 20.70
(inc. GST)
units
Per unit
Per Tube*
100 +
TWD19.70
TWD1,970.00
*price indicative