N-Channel MOSFET, 3.6 A, 900 V, 3-Pin TO-220AB Vishay IRFBF30PBF
- RS Stock No.:
- 178-0844
- Mfr. Part No.:
- IRFBF30PBF
- Manufacturer:
- Vishay
150 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Tube of 50)
TWD61.70
(exc. GST)
TWD64.78
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 50 | TWD61.70 | TWD3,085.00 |
| 100 - 150 | TWD60.40 | TWD3,020.00 |
| 200 + | TWD59.10 | TWD2,955.00 |
| *price indicative | ||
- RS Stock No.:
- 178-0844
- Mfr. Part No.:
- IRFBF30PBF
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Voltage | 900 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.7 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |
| Transistor Material | Si |
| Length | 10.41mm |
| Width | 4.7mm |
| Height | 9.01mm |
| Minimum Operating Temperature | -55 °C |