TN2106N3-G N-Channel MOSFET, 300 mA, 60 (Minimum) V TN2106, 3-Pin TO-92 Microchip Technology

  • RS Stock No. 177-9692
  • Mfr. Part No. TN2106N3-G
  • Manufacturer Microchip
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TW
Product Details

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Attribute Value
Channel Type N
Maximum Continuous Drain Current 300 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 0.6V
Maximum Power Dissipation 740 mW
Transistor Configuration Single
Maximum Gate Source Voltage 20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 4.06mm
Series TN2106
Height 5.33mm
Maximum Operating Temperature +150 °C
Length 5.08mm
Forward Diode Voltage 1.8V
Temporarily out of stock - back order for despatch 30/01/2020, delivery within 6 working days
Price (VAT excluded) Each (In a Bag of 1000)
TWD 9.10
(exc. GST)
TWD 9.60
(inc. GST)
Per unit
Per Bag*
1000 +
*price indicative