R6011END3TL1 N-Channel MOSFET, 11 A, 600 V R6011END3, 3-Pin DPAK ROHM

  • RS Stock No. 177-6062
  • Mfr. Part No. R6011END3TL1
  • Manufacturer ROHM
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): TH
Product Details

Power MOSFET R6011END3 is suitable for switching power supply.

Low on-resistance
Low radiation noise
Fast switching
Parallel use is easy
Pb-free plating

Attribute Value
Channel Type N
Maximum Continuous Drain Current 11 A
Maximum Drain Source Voltage 600 V
Package Type TO-252
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 390 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 124 W
Transistor Configuration Single
Maximum Gate Source Voltage ±30 V
Number of Elements per Chip 1
Width 6.4mm
Height 2.4mm
Series R6011END3
Maximum Operating Temperature +150 °C
Length 6.8mm
Forward Diode Voltage 1.5V
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 32 nC @ 10 V
Temporarily out of stock - back order for despatch 09/11/2020, delivery within 4 working days
Price (VAT excluded) Each (On a Reel of 2500)
TWD 35.10
(exc. GST)
TWD 36.90
(inc. GST)
Per unit
Per Reel*
2500 - 2500
5000 - 5000
7500 +
*price indicative