N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXYS IXFN110N60P3
- RS Stock No.:
- 168-4756
- Mfr. Part No.:
- IXFN110N60P3
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 11/12/2024, delivery within 6 working days
Added
Price (VAT excluded) Each (In a Tube of 10)
TWD1,080.80
(exc. GST)
TWD1,134.84
(inc. GST)
| Units | Per unit | Per Tube* |
| 10 - 10 | TWD1,080.80 | TWD10,808.00 |
| 20 - 30 | TWD1,048.40 | TWD10,484.00 |
| 40 + | TWD1,016.90 | TWD10,169.00 |
| *price indicative | ||
- RS Stock No.:
- 168-4756
- Mfr. Part No.:
- IXFN110N60P3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | SOT-227 |
| Series | HiperFET, Polar3 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 56 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.5 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 25.07mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 38.23mm |
| Typical Gate Charge @ Vgs | 245 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |