N-Channel MOSFET, 24 A, 1000 V, 3-Pin TO-264 IXYS IXFK24N100Q3
- RS Stock No.:
- 168-4701
- Mfr. Part No.:
- IXFK24N100Q3
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 02/04/2025, delivery within 6 working days
Added
Price (VAT excluded) Each (In a Tube of 25)
TWD764.30
(exc. GST)
TWD802.52
(inc. GST)
| Units | Per unit | Per Tube* |
| 25 - 100 | TWD764.30 | TWD19,107.50 |
| 125 + | TWD687.90 | TWD17,197.50 |
| *price indicative | ||
- RS Stock No.:
- 168-4701
- Mfr. Part No.:
- IXFK24N100Q3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 24 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | TO-264 |
| Series | HiperFET, Q3-Class |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 440 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Power Dissipation | 1 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 5.13mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 19.96mm |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 26.16mm |