N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

RS Stock No.:: 168-4577
Mfr. Part No.:: IXFN360N10T
Manufacturer:: IXYS

N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

The image is for reference only, please refer to product details and specifications

2290 In stock for delivery within 6 working days

Added

Price (VAT excluded) Each (In a Tube of 10)

TWD775.30

(exc. GST)

TWD814.06

(inc. GST)

Units	Per unit	Per Tube*
10 - 40	TWD775.30	TWD7,753.00
50 +	TWD697.80	TWD6,978.00
*price indicative

RS Stock No.:: 168-4577
Mfr. Part No.:: IXFN360N10T
Manufacturer:: IXYS

Product overview and Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	360 A
Maximum Drain Source Voltage	100 V
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	2.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	830 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	525 nC @ 10 V
Length	38.23mm
Maximum Operating Temperature	+175 °C
Width	25.07mm
Series	GigaMOS Trench HiperFET
Minimum Operating Temperature	-55 °C
Height	9.6mm
Forward Diode Voltage	1.2V